plastic medium-power complementary silicon transistors . . . designed for generalpurpose amplifier and lowspeed switching applications. ? high dc current gain e h fe = 2500 (typ) @ i c = 1.0 adc ? collectoremitter sustaining voltage e @ 30 madc v ceo(sus) = 60 vdc (min) e tip110, tip115 = 80 vdc (min) e tip111, tip116 = 100 vdc (min) e tip112, tip117 ? low collectoremitter saturation voltage e v ce(sat) = 2.5 vdc (max) @ i c = 2.0 adc ? monolithic construction with builtin baseemitter shunt resistors ? to220ab compact package ???????????????????????? ???????????????????????? *maximum ratings ??????????? ??????????? rating ???? ???? symbol ???? ???? tip110, tip115 ??? ??? tip111, tip116 ???? ???? tip112, tip117 ??? ??? unit ??????????? ??????????? collectoremitter voltage ???? ???? v ceo ???? ???? 60 ??? ??? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? collectorbase voltage ???? ???? v cb ???? ???? 60 ??? ??? 80 ???? ???? 100 ??? ??? vdc ??????????? ??????????? emitterbase voltage ???? ???? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous peak ???? ? ?? ? ???? i c ????????? ? ??????? ? ????????? 2.0 4.0 ??? ? ? ? ??? adc ??????????? ??????????? base current ???? ???? i b ????????? ????????? 50 ??? ??? madc ??????????? ? ????????? ? ??????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ????????? ? ??????? ? ????????? 50 0.4 ??? ? ? ? ??? watts w/ c ??????????? ??????????? total power dissipation @ t a = 25 c derate above 25 c ???? ???? p d ????????? ????????? 2.0 0.016 ??? ??? watts w/ c ??????????? ? ????????? ? ??????????? unclamped inductive load energy e figure 13 ???? ? ?? ? ???? e ????????? ? ??????? ? ????????? 25 ??? ? ? ? ??? mj ??????????? ??????????? operating and storage junction ???? ???? t j , t stg ????????? ????????? 65 to + 150 ??? ??? c thermal characteristics ????????????? ????????????? characteristics ????? ????? symbol ?????? ?????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 2.5 ??? ??? c/w ????????????? ????????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 62.5 ??? ??? c/w preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 4 1 publication order number: tip110/d tip110 tip111 tip112 tip115 tip116 tip117 darlington 2 ampere complementary silicon power transistors 6080100 volts 50 watts *on semiconductor preferred device * npn pnp * * * case 221a09 to220ab 1 2 3 4 style 1: pin 1. base 2. collector 3. emitter 4. collector
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 2 0 0 20 40 60 80 100 120 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 40 20 60 140 t c 0 2.0 1.0 3.0 t a t a t c
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) tip110, tip115 tip111, tip116 tip112, tip117 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 60 80 100 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) tip110, tip115 (v ce = 40 vdc, i b = 0) tip111, tip116 (v ce = 50 vdc, i b = 0) tip112 ,tip117 ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 2.0 2.0 2.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 60 vdc, i e = 0) tip110, tip115 (v cb = 80 vdc, i e = 0) tip111, tip116 (v cb = 100 vdc, i e = 0) tip112, tip117 ????? ? ??? ? ? ??? ? ????? i cbo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 1.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 1.0 adc, v ce = 4.0 vdc) (i c = 2.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 1000 500 ???? ? ?? ? ???? e e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 2.0 adc, i b = 8.0 madc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.5 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 2.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? smallsignal current gain (i c = 0.75 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ????? h fe ??? ??? 25 ???? ???? e ??? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) tip115, tip116, tip117 tip110, tip111, tip112 ????? ? ??? ? ? ??? ? ????? c ob ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 200 100 ??? ? ? ? ? ? ? ??? pf (1) pulse test: pulse width 300 m s, duty cycle 2%. figure 2. switching times test circuit 4.0 0.04 figure 3. switching times i c , collector current (amp) t, time (s) m 2.0 1.0 0.8 0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.6 pnp npn t f t r t s t d @ v be(off) = 0 v 2 approx +8.0 v v 1 approx -12 v t r , t f 10 ns duty cycle = 1.0% 25 m s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 60 scope for t d and t r , d 1 is disconnected and v 2 = 0, r b and r c are varied to obtain desired test currents. for npn test circuit, reverse diode, polarities and input pulses. r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 0.4 i b1 = i b2 t j = 25 c
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 4 figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z q jc(t) = r(t) r q jc r q jc = 2.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 1.0 figure 5. tip115, 116, 117 v ce , collector-emitter voltage (volts) 10 4.0 2.0 1.0 0.1 10 60 80 100 bonding wire limited thermally limited @ t c = 25 c (single pulse) i c , collector current (amps) t j = 150 c dc 1ms 40 tip115 tip116 tip117 secondary breakdown limited 5ms curves apply below rated v ceo 1.0 figure 6. tip110, 111, 112 v ce , collector-emitter voltage (volts) 10 4.0 2.0 1.0 0.1 10 80 100 i c , collector current (amps) 60 tip110 tip111 tip112 bonding wire limited thermally limited @ t c = 25 c (single pulse) t j = 150 c secondary breakdown limited curves apply below rated v ceo dc activeregion safeoperating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 0.04 v r , reverse voltage (volts) 10 0.4 0.6 1.0 2.0 40 4.0 0.06 0.1 0.2 c, capacitance (pf) 70 30 t c = 25 c c ib 50 c ob pnp npn figure 7. capacitance 100 20 6.0 10 20
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 6.0 k 0.04 figure 8. dc current gain i c , collector current (amp) 300 0.06 0.1 0.2 0.6 1.0 4.0 600 800 400 h fe , dc current gain 1.0 k 2.0 k v ce = 3.0 v 0.4 npn tip110, 111, 112 pnp tip115, 116, 117 figure 9. collector saturation region 3.4 0.1 i b , base current (ma) 0.6 0.2 1.0 2.0 20 100 1.8 i c = 0.5 a t j = 25 c 1.0 a 2.6 3.0 0.5 5.0 2.2 0.04 i c , collector current (amp) 0.06 0.1 0.2 0.6 1.0 2.0 4.0 1.8 1.4 1.0 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v, voltage (volts) figure 10. aono voltages v be @ v ce = 3.0 v 4.0 k 3.0 k t j = 125 c 25 c -55 c 50 i c , collector current (amp) h fe , dc current gain v ce = 3.0 v t j = 125 c 25 c -55 c 1.4 2.0 a i b , base current (ma) t j = 25 c i c , collector current (amp) v, voltage (volts) t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v be @ v ce = 3.0 v 2.0 10 0.4 6.0 k 0.04 300 0.06 0.1 0.2 0.6 1.0 4.0 600 800 400 1.0 k 2.0 k 0.4 4.0 k 3.0 k 2.0 2.2 1.0 4.0 a 3.4 0.1 0.6 0.2 1.0 2.0 20 100 1.8 2.6 3.0 0.5 5.0 50 1.4 10 2.2 1.0 i c = 0.5 a 1.0 a 2.0 a 4.0 a 2.2 0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0 1.8 1.4 1.0 0.6 0.2 0.4
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 6 figure 11. temperature coefficients npn tip110, 111, 112 pnp tip115, 116, 117 figure 12. collector cut-off region i c , collector current (amp) +0.8 v , temperature coefficients (mv/ c) q 0 -0.8 -1.6 -2.4 -3.2 -4.0 -4.8 *applies for i c /i b h fe /3 * q vc for v ce(sat) q vc for v be 0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0 25 c to 150 c -55 c to 25 c 0.1 25 c to 150 c -55 c to 25 c i c , collector current (amp) +0.8 v , temperature coefficients (mv/ c) q 0 -0.8 -1.6 -2.4 -3.2 -4.0 -4.8 *applies for i c /i b h fe /3 * q vc for v ce(sat) q vc for v be 0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0 25 c to 150 c -55 c to 25 c 0.1 25 c to 150 c -55 c to 25 c 10 5 -0.6 10 3 10 2 10 0 10 4 10 1 10 -1 v be , baseemitter voltage (volts) -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 v ce = 30 v t j = 150 c 100 c 25 c reverse forward +1.4 , collector current (a) m i c 10 5 -0.6 10 3 10 2 10 0 10 4 10 1 10 -1 v be , baseemitter voltage (volts) -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 v ce = 30 v t j = 150 c 100 c 25 c reverse forward +1.4 , collector current (a) m i c figure 13. inductive load switching note a: input pulse width is increased until i cm = 0.71 a, npn test shown; for pnp test reverse all polarity and use mje224 driver. 0.71 a 0 v -5 v t w 3.5 ms (see note a) input voltage collector current collector voltage v cer 0 v 20 v 100 ms v ce(sat) input mje254 50 w 50 w r bb1 2k w r bb2 100 w v bb2 = 0 tut v ce monitor 100 mh v cc = 20 v i c monitor r s = 0.1 w test circuit voltage and current waveforms + - v bb1 = 10 v + -
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 7 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
tip110 tip111 tip112 tip115 tip116 tip117 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip110/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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